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| MICRONAS HAL501...506, 508, 509, HAL516...519, 523 Hall Effect Sensor Family Edition Feb. 14, 2001 6251-109-4E 6251-485-2DS MICRONAS HAL5xx Contents Page 3 3 3 4 4 4 4 4 5 6 6 6 6 7 7 8 9 14 14 16 18 20 22 24 26 28 30 32 34 36 38 40 40 40 40 40 44 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 4.8. 4.9. 4.10. 4.11. 4.12. 4.13. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Descriptions HAL501 HAL502 HAL503 HAL504 HAL505 HAL506 HAL508 HAL509 HAL516 HAL517 HAL518 HAL519 HAL523 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC Data Sheet History 2 Micronas HAL5xx Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL5xx family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 150 C. All sensors are available in a SMD-package (SOT-89B) and in a leaded version (TO-92UA). 1.1. Features: - switching offset compensation at typically 62 kHz - operates from 3.8 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects - short-circuit protected open-drain output by thermal shut down - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. 523 Type 501 502 503 504 505 506 508 509 516 517 518 519 Switching Behavior bipolar latching latching unipolar latching unipolar unipolar unipolar unipolar with inverted output unipolar with inverted output unipolar with inverted output unipolar with inverted output (north polarity) unipolar Sensitivity very high high medium medium low high medium low high medium medium high see Page 14 16 18 20 22 24 26 28 30 32 34 36 1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching. low 38 Micronas 3 HAL5xx Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type A HAL501 HAL502 HAL503 HAL504 HAL505 HAL506 HAL508 HAL509 HAL516 HAL517 HAL518 HAL519 HAL523 501A 502A 503A 504A 505A 506A 508A 509A 516A 517A 518A 519A 523A Temperature Range K 501K 502K 503K 504K 505K 506K 508K 509K 516K 517K 518K 519K 523K E 501E 502E 503E 504E 505E 506E 508E 509E 516E 517E 518E 519E 523E 3 for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. Operating Junction Temperature Range A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in section 5.1. on page 40. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 5xx Example: HAL505UA-E Type: 505 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. VDD 1 OUT 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used 2 GND Fig. 1-1: Pin configuration 4 Micronas HAL5xx 2. Functional Description The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for reverse voltages ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection HAL5xx HAL5xx Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Hall Plate Switch Comparator Output OUT 3 Clock GND 2 Fig. 2-1: HAL5xx block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 2-2: Timing diagram Micronas 5 HAL5xx 3. Specifications 3.1. Outline Dimensions 4.55 0.15 0.3 1.7 2 y sensitive area 0.2 1.5 0.3 y 3.05 0.1 4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 0.42 2 3 0.55 1.15 0.4 0.36 1 2 3 0.75 0.2 14.0 min. 2.55 top view 0.48 3.1 0.2 4.06 0.1 sensitive area 0.4 1.27 1.27 branded side 2.54 0.06 0.04 SPGS0022-5-A3/2E branded side Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 45 SPGS7002-9-A/2E 0.8 Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x y center of the package 0.95 mm nominal TO-92UA center of the package 1.0 mm nominal Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. An improvement of the TO-92UA package with reduced tolerances will be introduced end of 2001. 6 Micronas HAL5xx 3.4. Absolute Maximum Ratings Symbol VDD -VP -IDD IDDZ VO IO IOmax IOZ TS TJ 1) 2) 3) 4) 5) Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range5) Junction Temperature Range Pin No. 1 1 1 1 3 3 3 3 Min. -15 -242) - -2003) -0.3 - - -2003) -65 -40 -40 Max. 281) - 501) 2003) 281) 501) 2503) 2003) 150 150 1704) Unit V V mA mA V mA mA mA C C as long as TJmax is not exceeded with a 220 series resistance at pin 1 corresponding to the test circuit on page 40 t < 2 ms t < 1000h Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V Micronas 7 HAL5xx 3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc fosc ten(O) tr tf RthJSB case SOT-89B RthJA case TO-92UA 1) Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Pin No. 1 1 Min. 2.3 1.6 Typ. 3 3 Max. 4.2 5.2 Unit mA mA Conditions TJ = 25 C 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 20 mA, TJ = 25 C IOL = 20 mA Output switched off, TJ = 25 C, VOH = 3.8 to 24 V Output switched off, TJ 150 C, VOH = 3.8 to 24 V TJ = 25 C, VDD = 4.5 V to 24 V 3 - 28 32 V Output Voltage Output Voltage over Temperature Range Output Leakage Current 3 3 - - 130 130 280 400 mV mV A A 3 - 0.06 0.1 Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time 3 - - 10 - 49 62 - kHz - 38 62 - kHz s VDD = 12 V 1) VDD = 12 V, RL = 820 Ohm, CL = 20 pF VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3 1 - 30 70 3 - 75 400 ns Output Fall Time 3 - 50 400 ns Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Thermal Resistance Junction to Soldering Point - - 150 200 K/W B > BON + 2 mT or B < BOFF - 2 mT for HAL 50x, B > BOFF + 2 mT or B < BON - 2 mT for HAL 51x 5.0 2.0 2.0 1.0 Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas HAL5xx 3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching type HAL 501 bipolar Parameter TJ -40 C 25 C 170 C HAL 502 latching -40 C 25 C 170 C HAL 503 latching -40 C 25 C 170 C HAL 504 unipolar -40 C 25 C 170 C HAL 505 latching -40 C 25 C 170 C HAL 506 unipolar -40 C 25 C 170 C HAL 508 unipolar -40 C 25 C 170 C HAL 509 unipolar -40 C 25 C 170 C HAL 516 unipolar inverted HAL 517 unipolar inverted HAL 518 unipolar inverted -40 C 25 C 170 C -40 C 25 C 170 C -40 C 25 C 170 C Min. -0.8 -0.5 -1.5 1 1 0.9 6.4 6 4 10.3 9.5 8.5 11.8 11 9.4 4.3 3.8 3.2 15.5 15 12.7 23.1 23.1 21.3 2.1 2 1.7 14 13.5 9 14 13.5 11 On point BON Typ. 0.6 0.5 0.7 2.8 2.6 2.3 8.6 8 6.4 13 12 10.2 15 13.5 11.7 5.9 5.5 4.6 19 18 15.3 27.4 26.8 25.4 3.8 3.5 3 17.1 16.2 12.3 16.7 16 13.6 Max. 2.5 2.3 3 5 4.5 4.3 10.8 10 8.9 15.7 14.5 13.7 18.3 17 16.1 7.7 7.2 6.8 21.9 20.7 20 31.1 30.4 28.9 5.4 5 5.2 21.5 19 18 20 19 18.3 Min. -2.5 -2.3 -2.5 -5 -4.5 -4.3 -10.8 -10 -8.9 5.3 5 4.2 -18.3 -17 -16.1 2.1 2 1.7 14 13.5 11.4 19.9 19.9 18.3 4.3 3.8 3.2 15.5 15 10.5 15.5 15 12.2 Off point BOFF Typ. -0.8 -0.7 -0.2 -2.8 -2.6 -2.3 -8.6 -8 -6 7.5 7 5.9 -15 -13.5 -11.7 3.8 3.5 3 16.7 16 13.6 23.8 23.2 22.1 5.9 5.5 4.6 19.6 18.3 13.7 19 18 15.3 Max. 0.8 0.5 2 -1 -1 -0.9 -6.4 -6 -4 9.6 9 8.5 -11.8 -11 -9.4 5.4 5 5.2 20 19 18.3 27.2 26.6 25.3 7.7 7.2 6.8 22.5 20.7 20 22 20.7 20 Hysteresis BHYS Min. 0.5 0.5 0.4 4.5 4.5 3.5 14.6 13.6 11 4.4 4 3.2 26 24 20 1.6 1.5 0.9 1.6 1.5 1 2.9 2.8 2.5 1.6 1.5 0.9 1.6 1.5 0.8 1.5 1.4 0.8 Typ. 1.4 1.2 0.9 5.6 5.2 4.6 17.2 16 12.4 5.5 5 4.3 30 27 23.4 2.1 2 1.6 2.3 2 1.7 3.6 3.5 3.3 2.1 2 1.6 2.5 2.1 1.4 2.3 2 1.7 Max. 2 1.9 1.8 7.2 7 6.8 20.6 18 16 6.5 6.5 6.4 34 32 31.3 2.8 2.7 2.6 2.8 2.7 2.6 3.9 3.9 3.8 2.8 2.7 2.6 3 2.7 2.4 3 2.8 2.6 mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT Unit Note: For detailed descriptions of the individual types, see pages 14 and following. Micronas 9 HAL5xx Magnetic Characteristics Overview, continued Sensor Switching type HAL 519 unipolar inverted HAL 523 unipolar Parameter TJ -40 C 25 C 170 C -40 C 25 C 170 C Min. -5.4 -5 -5.2 28 28 28 On point BON Typ. -3.8 -3.6 -3.0 34.5 34.5 34.5 Max. -2.1 -2 -1.5 42 42 42 Min. -7.7 -7.2 -6.8 18 18 18 Off point BOFF Typ. -5.9 -5.5 -4.6 24 24 24 Max. -4.3 -3.8 -2.8 30 30 30 Hysteresis BHYS Min. 1.6 1.5 0.9 7 7 7 Typ. 2.1 1.9 1.6 10.5 10.5 10.5 Max. 2.8 2.7 2.6 14 14 14 mT mT mT mT mT mT Unit Note: For detailed descriptions of the individual types, see pages 14 and following. mA 25 20 IDD 15 10 5 0 -5 TA = -40 C TA = 25 C TA=170 C HAL 5xx mA 5.0 4.5 IDD 4.0 3.5 HAL 5xx TA = -40 C TA = 25 C 3.0 2.5 2.0 1.5 1.0 TA = 100 C TA = 170 C -10 -15 -15-10 -5 0 0.5 0 5 10 15 20 25 30 35 V VDD 1 2 3 4 5 6 VDD 7 8V Fig. 3-4: Typical supply current versus supply voltage Fig. 3-5: Typical supply current versus supply voltage 10 Micronas HAL5xx mA 5 HAL 5xx kHz 100 90 HAL 5xx IDD 4 VDD = 24 V VDD = 12 V fosc 80 70 TA = 25 C 60 TA = -40 C 50 TA = 170 C 3 2 VDD = 3.8 V 40 30 1 20 10 0 -50 0 50 100 150 TA 200 C 0 0 5 10 15 20 25 VDD 30 V Fig. 3-6: Typical supply current versus ambient temperature Fig. 3-8: Typ. Internal chopper frequency versus supply voltage kHz 100 90 fosc 80 70 60 50 40 30 20 10 0 -50 HAL 5xx kHz 100 90 fosc 80 70 HAL 5xx VDD = 3.8 V TA = 25 C 60 VDD = 4.5 V...24 V 50 40 30 20 10 200 C 0 TA = -40 C TA = 170 C 0 50 100 150 TA 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 3-7: Typ. internal chopper frequency versus ambient temperature Fig. 3-9: Typ. internal chopper frequency versus supply voltage Micronas 11 HAL5xx mV 400 350 VOL 300 HAL 5xx IO = 20 mA mV 400 HAL 5xx IO = 20 mA VDD = 3.8 V VOL 300 TA = 170 C 250 200 150 100 50 0 0 -50 TA = 100 C 200 VDD = 4.5 V VDD = 24 V TA = 25 C TA = -40 C 100 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA 200 C Fig. 3-10: Typical output low voltage versus supply voltage Fig. 3-12: Typical output low voltage versus ambient temperature mV 600 HAL 5xx IO = 20 mA mA 104 103 HAL 5xx VOL 500 IOH 102 TA = 170 C 101 TA = 150 C TA = 100 C 400 100 300 TA = 170 C TA =100 C 200 TA = 25 C 100 TA = -40 C 10-1 10-2 10-3 10-4 10-5 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V 10-6 15 TA = 25 C TA = -40 C 20 25 30 VOH 35 V Fig. 3-11: Typical output low voltage versus supply voltage Fig. 3-13: Typical output high current versus output voltage 12 Micronas HAL5xx A 102 HAL 5xx dBV 80 70 HAL 5xx VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit 2 101 IOH 100 VOH = 24 V VDD 60 50 10-1 VOH = 3.8 V 10-2 30 10-3 20 10-4 10 0 0.01 40 max. spurious signals 10-5 -50 0 50 100 150 TA 200 C 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3-14: Typical output leakage current versus ambient temperature Fig. 3-16: Typ. spectrum at supply voltage dBA 30 HAL 5xx VDD = 12 V TA = 25 C Quasi-PeakMeasurement max. spurious signals IDD 20 10 0 -10 -20 -30 0.01 0.10 1.00 1 10.00 100.00 1000.00 10 100 1000 MHz f Fig. 3-15: Typ. spectrum of supply current Micronas 13 HAL501 4. Type Description 4.1. HAL 501 The HAL 501 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4-1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: - switching type: bipolar - very high sensitivity - typical BON: 0.5 mT at room temperature - typical BOFF: -0.7 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 4-1: Definition of magnetic switching points for the HAL 501 BOFF 0 BON VOL B Applications The HAL 501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: - applications with large airgap or weak magnets, - rotating speed measurement, - CAM shaft sensors, and - magnetic encoders. Output Voltage VO BHYS Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. -0.8 -0.5 -0.9 -1.2 -1.5 On point BON Typ. 0.6 0.5 0.5 0.6 0.7 Max. 2.5 2.3 2.5 2.8 3 Off point BOFF Min. -2.5 -2.3 -2.5 -2.5 -2.5 Typ. -0.8 -0.7 -0.6 -0.5 -0.2 Max. 0.8 0.5 0.9 1.3 2 Hysteresis BHYS Min. 0.5 0.5 0.5 0.5 0.4 Typ. 1.4 1.2 1.1 1.1 0.9 Max. 2 1.9 1.8 1.8 1.8 -1.4 Magnetic Offset BOFFSET Min. Typ. -0.1 -0.1 0 0 0.2 1.4 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 Micronas HAL501 mT 3 HAL 501 mT 3 HAL 501 BONmax BON BOFF 2 BON BOFF 2 BOFFmax 1 BONtyp 0 BOFFtyp 1 BON 0 -1 TA = -40 C -2 TA = 25 C TA = 100 C TA = 170 C -3 0 5 10 15 20 BOFF -1 VDD = 3.8 V -2 VDD = 4.5 V... 24 V BOFFmin BONmin 25 VDD 30 V -3 -50 0 50 100 150 TA, TJ 200 C Fig. 4-2: Typ. magnetic switching points versus supply voltage Fig. 4-4: Magnetic switching points versus temperature mT 3 HAL 501 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 2 1 BON 0 -1 TA = -40 C -2 TA = 25 C TA = 100 C TA = 170 C -3 3 3.5 4.0 4.5 5.0 BOFF 5.5 VDD 6.0 V Fig. 4-3: Typ. magnetic switching points versus supply voltage Micronas 15 HAL502 4.2. HAL 502 The HAL 502 is the most sensitive latching sensor of this family (see Fig. 4-5). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: - switching type: latching - high sensitivity - typical BON: 2.6 mT at room temperature - typical BOFF: -2.6 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF 0 BON B VOL Applications The HAL 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: - applications with large airgap or weak magnets, - rotating speed measurement, - commutation of brushless DC motors, - CAM shaft sensors, and - magnetic encoders. Output Voltage VO BHYS Fig. 4-5: Definition of magnetic switching points for the HAL 502 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 1 1 0.95 0.9 0.9 On point BON Typ. 2.8 2.6 2.5 2.4 2.3 Max. 5 4.5 4.4 4.3 4.3 Off point BOFF Min. -5 -4.5 -4.4 -4.3 -4.3 Typ. -2.8 -2.6 -2.5 -2.4 -2.3 Max. -1 -1 -0.95 -0.9 -0.9 Hysteresis BHYS Min. 4.5 4.5 4 3.7 3.5 Typ. 5.6 5.2 5 4.8 4.6 Max. 7.2 7 6.8 6.8 6.8 -1.5 Magnetic Offset Min. Typ. 0 0 0 0 0 1.5 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 Micronas HAL502 mT 6 HAL 502 mT 6 BONmax 4 HAL 502 BON BOFF 4 BON 2 TA = -40 C 0 TA = 25 C TA = 100 C TA = 170 C -2 BOFF -4 BON BOFF 2 BONmin 0 VDD = 3.8 V VDD = 4.5 V... 24 V BOFFmax -2 BONtyp BOFFtyp -4 BOFFmin -6 0 5 10 15 20 25 VDD 30 V -6 -50 0 50 100 150 TA, TJ 200 C Fig. 4-6: Typ. magnetic switching points versus supply voltage Fig. 4-8: Magnetic switching points versus temperature mT 6 HAL 502 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 4 BON 2 TA = -40 C TA = 25 C TA = 100 C TA = 170 C -2 BOFF -4 0 -6 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas 17 HAL503 4.3. HAL 503 The HAL 503 is a latching sensor (see Fig. 4-9). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO Magnetic Features: - switching type: latching - medium sensitivity - typical BON: 7.6 mT at room temperature - typical BOFF: -7.6 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF 0 BON B VOL BHYS Applications The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter. Output Voltage Fig. 4-9: Definition of magnetic switching points for the HAL 503 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 6.4 6 4.8 4.4 4 On point BON Typ. 8.4 7.6 7.1 6.7 6.4 Max. 10.8 10 9.5 9.2 8.9 Off point BOFF Min. -10.8 -10 -9.5 -9.2 -8.9 Typ. -8.6 -7.6 -6.9 -6.4 -6 Max. -6.4 -6 -4.8 -4.4 -4 Hysteresis BHYS Min. 14.6 13.6 12.3 11.5 11 Typ. 17 15.2 14 13.1 12.4 Max. 20.6 18 17 16.5 16 -1.5 Magnetic Offset Min. Typ. -0.1 0 0.1 0.1 0.2 1.5 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 18 Micronas HAL503 mT 12 HAL 503 mT 12 BONmax HAL 503 BON BOFF BON 8 BON BOFF 8 BONtyp 4 BONmin VDD = 3.8 V VDD = 4.5 V... 24 V -4 BOFFmax BOFFtyp BOFFmin 4 TA = -40 C 0 TA = 25 C TA = 100 C TA = 170 C -4 0 -8 BOFF -12 -8 0 5 10 15 20 25 VDD 30 V -12 -50 0 50 100 150 TA, TJ 200 C Fig. 4-10: Typ. magnetic switching points versus supply voltage Fig. 4-12: Magnetic switching points versus temperature mT 12 HAL 503 Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON 8 4 TA = -40 C 0 TA = 25 C TA = 100 C TA = 170 C -4 -8 BOFF -12 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-11: Typ. magnetic switching points versus supply voltage Micronas 19 HAL504 4.4. HAL 504 The HAL 504 is a unipolar switching sensor (see Fig. 4-13). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - medium sensitivity - typical BON: 12 mT at room temperature - typical BOFF: 7 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 BOFF BON VOL B Applications The HAL 504 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, - contactless solution to replace micro switches, - position and end-point detection, and - rotating speed measurement. Output Voltage VO BHYS Fig. 4-13: Definition of magnetic switching points for the HAL 504 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 10.3 9.5 9 8.7 8.5 On point BON Typ. 13 12 11.1 10.6 10.2 Max. 15.7 14.5 14.1 13.9 13.7 Off point BOFF Min. 5.3 5 4.6 4.4 4.2 Typ. 7.5 7 6.4 6.1 5.9 Max. 9.6 9 8.7 8.6 8.5 Hysteresis BHYS Min. 4.4 4 3.6 3.4 3.2 Typ. 5.5 5 4.7 4.5 4.3 Max. 6.5 6.5 6.4 6.4 6.4 7.2 Magnetic Offset Min. Typ. 10.2 9.5 8.8 8.4 8 11.8 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 20 Micronas HAL504 mT 18 16 14 HAL 504 mT 18 16 BONmax 14 12 10 8 6 BONmin BOFFmax HAL 504 BON BOFF BON BOFF BON 12 10 8 6 4 2 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 0 5 10 15 20 25 VDD 30 V BOFF BONtyp BOFFtyp BOFFmin VDD = 3.8 V VDD = 4.5 V... 24 V 4 2 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-14: Typ. magnetic switching points versus supply voltage Fig. 4-16: Magnetic switching points versus temperature mT 18 16 BON BOFF 14 HAL 504 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 12 10 8 6 4 2 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V BOFF Fig. 4-15: Typ. magnetic switching points versus supply voltage Micronas 21 HAL505 4.5. HAL 505 The HAL 505 is a latching sensor (see Fig. 4-17). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. VO Magnetic Features: - switching type: latching - low sensitivity - typical BON: 13.5 mT at room temperature - typical BOFF: -13.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF 0 BON B VOL BHYS Applications The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter. Output Voltage Fig. 4-17: Definition of magnetic switching points for the HAL 505 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 11.8 11 10.2 9.7 9.4 On point BON Typ. 15 13.5 12.4 12 11.7 Max. 18.3 17 16.6 16.3 16.1 Off point BOFF Min. -18.3 -17 -16.6 -16.3 -16.1 Typ. -15 -13.5 -12.4 -12 -11.7 Max. -11.8 -11 -10.2 -9.7 -9.4 Hysteresis BHYS Min. 26 24 22 21 20 Typ. 30 27 24.8 24.2 23.4 Max. 34 32 31.3 31.3 31.3 -1.5 Magnetic Offset Min. Typ. 0 0 0 0 0 1.5 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Micronas HAL505 mT 20 BON 15 BOFF 10 5 0 -5 -10 -15 -20 HAL 505 BON mT 20 BONmax BON 15 BOFF 10 5 0 -5 -10 -15 BOFFmin -20 -50 BOFFmax BONmin VDD = 3.8 V HAL 505 BONtyp TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF VDD = 4.5 V... 24 V BOFFtyp 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 C Fig. 4-18: Typ. magnetic switching points versus supply voltage Fig. 4-20: Magnetic switching points versus temperature mT 20 15 10 5 0 -5 -10 -15 -20 HAL 505 BON Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-19: Typ. magnetic switching points versus supply voltage Micronas 23 HAL506 4.6. HAL 506 The HAL 506 is the most sensitive unipolar switching sensor of this family (see Fig. 4-21). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 516 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: - switching type: unipolar - high sensitivity - typical BON: 5.5 mT at room temperature - typical BOFF: 3.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 BOFF BON VOL B Applications The HAL 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS Fig. 4-21: Definition of magnetic switching points for the HAL 506 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 4.3 3.8 3.6 3.4 3.2 On point BON Typ. 5.9 5.5 5.1 4.8 4.6 Max. 7.7 7.2 7 6.9 6.8 Off point BOFF Min. 2.1 2 1.9 1.8 1.7 Typ. 3.8 3.5 3.3 3.1 3 Max. 5.4 5 4.9 5.1 5.2 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 2 1.8 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 3.8 Magnetic Offset Min. Typ. 4.8 4.5 4.2 4 3.8 6.2 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 24 Micronas HAL506 mT 8 7 HAL 506 mT 8 7 6 5 BOFFmax 4 3 BONmax HAL 506 BON BOFF BON 6 5 4 3 2 1 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF BON BOFF BONtyp BONmin BOFFtyp BOFFmin VDD = 3.8 V VDD = 4.5 V... 24 V 0 50 100 150 TA, TJ 200 C 2 1 0 -50 0 5 10 15 20 25 VDD 30 V Fig. 4-22: Typ. magnetic switching points versus supply voltage Fig. 4-24: Magnetic switching points versus temperature mT 8 7 HAL 506 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON 6 5 4 3 BOFF 2 1 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-23: Typ. magnetic switching points versus supply voltage Micronas 25 HAL508 4.7. HAL 508 The HAL 508 is a unipolar switching sensor (see Fig. 4-25). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 518 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: - switching type: unipolar - medium sensitivity - typical BON: 18 mT at room temperature - typical BOFF: 16 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 BOFF BON B Fig. 4-25: Definition of magnetic switching points for the HAL 508 Applications The HAL 508 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS VOL Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 15.5 15 13.9 13.2 12.7 On point BON Typ. 19 18 16.6 15.8 15.3 Max. 21.9 20.7 20.4 20.2 20 Off point BOFF Min. 14 13.5 12.5 11.9 11.4 Typ. 16.7 16 14.8 14.1 13.6 Max. 20 19 18.7 18.5 18.3 Hysteresis BHYS Min. 1.6 1.5 1.2 1.1 1 Typ. 2.3 2 1.8 1.7 1.7 Max. 2.8 2.7 2.6 2.6 2.6 14 Magnetic Offset Min. Typ. 17.8 17 15.7 15 14.4 20 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 26 Micronas HAL508 mT 25 HAL 508 mT 25 HAL 508 BON BOFF 20 BON BON BOFF 20 BONmax BOFFmax 15 BOFF 10 TA = -40 C TA = 25 C 5 TA = 100 C TA = 170 C 15 BONtyp BOFFtyp BONmin BOFFmin 10 5 VDD = 3.8 V VDD = 4.5 V... 24 V 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-26: Typ. magnetic switching points versus supply voltage Fig. 4-28: Magnetic switching points versus temperature mT 25 HAL 508 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 20 BON 15 BOFF 10 TA = -40 C TA = 25 C 5 TA = 100 C TA = 170 C 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-27: Typ. magnetic switching points versus supply voltage Micronas 27 HAL509 4.8. HAL 509 The HAL 509 is a unipolar switching sensor (see Fig. 4-29). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - low sensitivity - typical BON: 26.8 mT at room temperature - typical BOFF: 23.2 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -300 ppm/K 0 BOFF BON Applications The HAL 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS VOL B Fig. 4-29: Definition of magnetic switching points for the HAL 509 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 23.1 23.1 22.2 21.7 21.3 On point BON Typ. 27.4 26.8 26.1 25.7 25.4 Max. 31.1 30.4 29.7 29.2 28.9 Off point BOFF Min. 19.9 19.9 19.1 18.6 18.3 Typ. 23.8 23.2 22.7 22.4 22.1 Max. 27.2 26.6 25.9 25.6 25.3 Hysteresis BHYS Min. 2.9 2.8 2.7 2.6 2.5 Typ. 3.6 3.5 3.4 3.3 3.3 Max. 3.9 3.9 3.8 3.8 3.8 21.5 Magnetic Offset Min. Typ. 25.6 25 24.4 24 23.7 28.5 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 28 Micronas HAL509 mT 35 HAL 509 mT 35 BONmax HAL 509 BON 30 BOFF 25 BON BON 30 BOFF 25 BOFFmax BONtyp BOFFtyp BONmin BOFFmin 20 BOFF 20 15 TA = -40 C TA = 25 C TA = 100 C 5 TA = 170 C 15 10 10 VDD = 3.8 V 5 VDD = 4.5 V... 24 V 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-30: Typ. magnetic switching points versus supply voltage Fig. 4-32: Magnetic switching points versus temperature mT 35 HAL 509 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 30 BOFF 25 BON 20 BOFF 15 TA = -40 C TA = 25 C TA = 100 C 5 TA = 170 C 10 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-31: Typ. magnetic switching points versus supply voltage Micronas 29 HAL516 4.9. HAL 516 The HAL 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4-33). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: - switching type: unipolar inverted - high sensitivity - typical BON: 3.5 mT at room temperature - typical BOFF: 5.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 VOL BON BOFF B Applications The HAL 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS Fig. 4-33: Definition of magnetic switching points for the HAL 516 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 2.1 2 1.9 1.8 1.7 On point BON Typ. 3.8 3.5 3.3 3.1 3 Max. 5.4 5 4.9 5.1 5.2 Off point BOFF Min. 4.3 3.8 3.6 3.4 3.2 Typ. 5.9 5.5 5.1 4.8 4.6 Max. 7.7 7.2 7 6.9 6.8 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 2 1.8 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 3.8 Magnetic Offset Min. Typ. 4.8 4.5 4.2 4 3.8 6.2 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 30 Micronas HAL516 mT 8 7 6 HAL 516 mT 8 7 6 BOFFmax HAL 516 BON BOFF BON BOFF BOFF 5 4 BON 3 2 1 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 3 2 1 0 -50 BONmin VDD = 3.8 V VDD = 4.5 V... 24 V 0 50 100 150 TA, TJ 5 BONmax 4 BOFFmin BOFFtyp BONtyp 0 5 10 15 20 25 VDD 30 V 200 C Fig. 4-34: Typ. magnetic switching points versus supply voltage Fig. 4-36: Magnetic switching points versus temperature mT 8 7 6 5 4 3 2 1 0 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 HAL 516 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BOFF BON 5.5 VDD 6.0 V Fig. 4-35: Typ. magnetic switching points versus supply voltage Micronas 31 HAL517 4.10. HAL 517 The HAL 517 is a unipolar switching sensor with inverted output (see Fig. 4-37). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar inverted - medium sensitivity - typical on point is 16.2 mT at room temperature - typical off point is 18.3 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1700 ppm/K 0 VOL BON BOFF B BHYS Applications The HAL 517 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO Fig. 4-37: Definition of magnetic switching points for the HAL 517 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 14 13.5 11 10 9 On point BON Typ. 17.1 16.2 14.3 13.2 12.3 Max. 21.5 19 18.5 18.2 18 Off point BOFF Min. 15.5 15 12.8 11.5 10.5 Typ. 19.6 18.3 16.1 14.8 13.7 Max. 22.5 20.7 20.4 20.2 20 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.8 Typ. 2.5 2.1 1.8 1.6 1.4 Max. 3 2.7 2.6 2.6 2.4 14 Magnetic Offset Min. Typ. 18.3 17.2 15.2 14 13 20 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 32 Micronas HAL517 mT 25 HAL 517 mT 25 HAL 517 BON BOFF 20 BOFF BON BOFF 20 BOFFmax BONmax 15 15 BOFFtyp BONtyp BON 10 TA = -40 C TA = 25 C 5 TA = 100 C TA = 170 C 5 VDD = 3.8 V VDD = 4.5 V... 24 V 10 BONmin BOFFmin 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-38: Typ. magnetic switching points versus supply voltage Fig. 4-40: Magnetic switching points versus temperature mT 25 HAL 517 Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 20 BOFF 15 BON 10 TA = -40 C TA = 25 C 5 TA = 100 C TA = 170 C 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-39: Typ. magnetic switching points versus supply voltage Micronas 33 HAL518 4.11. HAL 518 The HAL 518 is a unipolar switching sensor with inverted output (see Fig. 4-41). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 5xx family, the HAL 508 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: - switching type: unipolar inverted - medium sensitivity - typical BON: 16 mT at room temperature - typical BOFF: 18 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 VOL BON BOFF B Applications The HAL 518 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS Fig. 4-41: Definition of magnetic switching points for the HAL 518 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 14 13.5 12.5 11.7 11 On point BON Typ. 16.7 16 14.8 14.1 13.6 Max. 20 19 18.7 18.5 18.3 Off point BOFF Min. 15.5 15 13.9 13 12.2 Typ. 19 18 16.6 15.8 15.3 Max. 22 20.7 20.4 20.2 20 Hysteresis BHYS Min. 1.5 1.4 1 0.9 0.8 Typ. 2.3 2 1.8 1.7 1.7 Max. 3 2.8 2.7 2.7 2.6 14 Magnetic Offset Min. Typ. 17.8 17 15.7 15 14.4 20 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 34 Micronas HAL518 mT 25 HAL 518 mT 25 HAL 518 BON BOFF 20 BOFF BON BOFF 20 BOFFmax BONmax 15 BON 15 BOFFtyp BONtyp BONmin BOFFmin 10 TA = -40 C TA = 25 C 5 TA = 100 C TA = 170 C 10 5 VDD = 3.8 V VDD = 4.5 V... 24 V 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-42: Typ. magnetic switching points versus supply voltage Fig. 4-44: Magnetic switching points versus temperature mT 25 HAL 518 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 20 BOFF 15 BON 10 TA = -40 C TA = 25 C TA = 100 C TA = 170 C 5 0 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-43: Typ. magnetic switching points versus supply voltage Micronas 35 HAL519 4.12. HAL 519 The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity. (see Fig. 4-45). The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. Magnetic Features: - switching type: unipolar inverted, north sensitive - high sensitivity - typical BON: -3.5 mT at room temperature - typical BOFF: -5.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF BON 0 B BHYS VOL Applications The HAL 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO Fig. 4-45: Definition of magnetic switching points for the HAL 519 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. -5.4 -5 -4.9 -5.1 -5.2 On point BON Typ. -3.8 -3.6 -3.3 -3.1 -3 Max. -2.1 -2 -1.9 -1.7 -1.5 Off point BOFF Min. -7.7 -7.2 -6.7 -6.8 -6.8 Typ. -5.9 -5.5 -5 -4.8 -4.6 Max. -4.3 -3.8 -3.4 -3.1 -2.8 Hysteresis BHYS Min. 1.6 1.5 1.2 1 0.9 Typ. 2.1 1.9 1.7 1.7 1.6 Max. 2.8 2.7 2.6 2.6 2.6 -6.2 Magnetic Offset Min. Typ. -4.8 -4.5 -4.2 -4 -3.8 -3.8 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 36 Micronas HAL519 mT 0 BON -1 BOFF -2 -3 HAL 519 TA = -40 C TA = 25 C TA = 100 C TA = 170 C mT 0 BON -1 BOFF -2 -3 HAL 519 VDD = 3.8 V VDD = 4.5 V...24 V BONmax BON -4 -5 BOFF -6 -7 -8 -6 -7 -4 -5 BONtyp BOFFmax BONmin BOFFtyp BOFFmin 0 5 10 15 20 25 VDD 30 V -8 -50 0 50 100 150 TA, TJ 200 C Fig. 4-46: Typ. magnetic switching points versus supply voltage Fig. 4-48: Magnetic switching points versus temperature mT 0 BON -1 BOFF -2 -3 -4 -5 -6 HAL 519 TA = -40 C TA = 25 C TA = 100 C TA = 170 C BON Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF -7 -8 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-47: Typ. magnetic switching points versus supply voltage Micronas 37 HAL523 4.13. HAL 523 The HAL 523 is the least sensitive unipolar switching sensor of this family (see Fig. 4-49). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - low sensitivity - typical BON: 34.5 mT at room temperature - typical BOFF: 24 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON Applications The HAL 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. Output Voltage VO BHYS VOL B Fig. 4-49: Definition of magnetic switching points for the HAL 523 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 28 28 28 28 28 On point BON Typ. 34.5 34.5 34.5 34.5 34.5 Max. 42 42 42 42 42 Off point BOFF Min. 18 18 18 18 18 Typ. 24 24 24 24 24 Max. 30 30 30 30 30 Hysteresis BHYS Min. 7 7 7 7 7 Typ. 10.5 10.5 10.5 10.5 10.5 Max. 14 14 14 14 14 Magnetic Offset Min. Typ. 29.3 29.3 29.3 29.3 29.3 Max. mT mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 38 Micronas HAL523 mT 45 40 35 30 25 20 TA = -40 C 15 10 5 0 TA = 25 C TA = 100 C TA = 170 C HAL 523 mT 45 BONmax 40 35 30 BOFFmax BONmin HAL 523 BON BOFF BON BON BOFF BONtyp BOFF 25 20 15 10 5 BOFFtyp BOFFmin VDD = 3.8 V VDD = 4.5 V...24 V 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C Fig. 4-50: Typ. magnetic switching points versus supply voltage Fig. 4-52: Magnetic switching points versus temperature mT 45 40 35 30 25 20 TA = -40 C 15 10 5 0 TA = 25 C TA = 100 C TA = 170 C HAL 523 Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF BON BOFF 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 4-51: Typ. magnetic switching points versus supply voltage Micronas 39 HAL5xx 5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V has not been tested. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ... HAL519), the output state will be high if B > BOFF and low if B < BON. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 40 Micronas Fig. 5-1: Test circuit for EMC investigations Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 5-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. RV 220 1 VEMC VP 4.7 nF 2 GND VDD OUT 3 20 pF RL 1.2 k HAL5xx Micronas 41 HAL5xx 42 Micronas HAL5xx Micronas 43 HAL5xx 6. Data Sheet History 1. Final data sheet: "HAL 501...506, 508, 509, 516... 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251-485-1DS. First release of the final data sheet. Major changes to the previous edition "HAL501 ... HAL506, HAL 508", Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS: - additional types: HAL509, HAL516 ... HAL518 - additional package SOT-89B - additional temperature range "K" - outline dimensions for SOT-89A and TO-92UA changed - absolute maximum ratings changed - electrical characteristics changed - magnetic characteristics for HAL 501, HAL 503, HAL 506, and HAL 509 changed 2. Final data sheet: "HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family", Feb. 14, 2001, 6251-485-2DS. Second release of the final data sheet. Major changes: - additional types: HAL519, HAL523 - phased-out package SOT-89A removed - temperature range "C" removed - outline dimensions for SOT-89B: reduced tolerances Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (02/01) Order No. 6251-485-2DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 44 Micronas |
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